Device Simulation for NANO MOSFET and Scaling issues

Abstract For understanding of the device operations and its interaction with the circuit in the nano scale era, the device simulation has been extended to include the quantum transport effects, statistical effects and to be compatible with the circuit simulation environments. To do so, the full Newton scheme has been developed to fully integrate the Poisson equation, transport equation and the Schrodinger equation in the NANOCAD[1], which is the in-house developed program for the 2 and 3 dimensional device simulator. The method is applied to the nano scale Double Gate(DG) MOSFET structure showing that the quantum effect in the transport direction as well as in the vertical direction is important. Also, the CLESICO[2] system has been developed to treat the nodes in the device same as the nodes in the circuit, thereby the effects of the internal physics in the device on the circuits can be readily understood. The method is applied to understand the effects of the thermal noise of the MOSFET channel in the RF mixer and the local oscillator.